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| Gunter Semiconductor GmbH N Channel Power MOSFET with low RDS(on) GFCE30 Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 150 Operating Temperature * Fast Switching * Fully Avalanche Rated * Low RDS(on) Mechanical Data: D17 Dimension 4.42mm x 5.23mm 480 m Thickness: Metallization: Al Top : : CrNiAg / Au Backside : Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn Source Bonding Wire: 10 mil Al Absolute Maximum Rating Characteristics Drain-to-Source Breakdown Voltage Static Drain-to - Source On-resistance Continuous Drain current ( in target package) Continuous Drain current ( in target package) Operation Junction Storage Temperature @Ta=25 Symbol V(BR)DSS RDS(ON) ID@25 ID@100 Tj Limit Unit Test Conditions VGS=0V, ID=250 VGS=10V, ID=2.5A VGS=10V VGS=10V 800 3.2 27 19 -55~150 -55~150 V A A TSTR Target Device: IRFBE30 TO-220AB PD 125 W @Tc=25 |
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